INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 500(Min) @ IC= 2A